N-Channel Power MOSFET, 30V Vds, 11A Continuous Drain Current, and 11.9mΩ Rds On at 10V Vgs. Features a 1.8V threshold voltage and 760pF input capacitance. Operates from -55°C to 150°C with a 2.5W power dissipation. Packaged in a surface-mount SOIC package (MS-012AA) with fast switching times, including a 4.4ns fall time and 7.3ns turn-off delay.
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International Rectifier IRF8707GPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 17.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 760pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 11.9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 7.3ns |
| Turn-On Delay Time | 6.7ns |
| Width | 4mm |
| RoHS | Compliant |
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