N-Channel Power MOSFET, 30V Vds, 11A Continuous Drain Current, and 11.9mΩ Rds On at 10V Vgs. Features a 1.8V threshold voltage and 760pF input capacitance. Operates from -55°C to 150°C with a 2.5W power dissipation. Packaged in a surface-mount SOIC package (MS-012AA) with fast switching times, including a 4.4ns fall time and 7.3ns turn-off delay.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF8707GPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
17.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
4.4ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
760pF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
1
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
11.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
1.8V
Turn-Off Delay Time
7.3ns
Turn-On Delay Time
6.7ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF8707GPBF Datasheet
Download the complete datasheet for International Rectifier IRF8707GPBF to view detailed technical specifications.
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