N-Channel Power MOSFET, 30V Vds, 14A Continuous Drain Current, 8.7mΩ Rds On. Features 1.8V Threshold Voltage, 1.02nF Input Capacitance, and 2.5W Max Power Dissipation. Operates from -55°C to 150°C with 5ns Fall Time and 10ns Turn-On Delay. Packaged in a surface-mount SOIC (SOP-8) case, this silicon metal-oxide semiconductor FET is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF8714GPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
14A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
13mR
Drain to Source Voltage (Vdss)
30V
Fall Time
5ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
1.02nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
8.7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
1.8V
Turn-Off Delay Time
11ns
Turn-On Delay Time
10ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF8714GPBF Datasheet
Download the complete datasheet for International Rectifier IRF8714GPBF to view detailed technical specifications.
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