N-Channel Power MOSFET, 30V Vds, 14A Continuous Drain Current, 8.7mΩ Rds On. Features 1.8V Threshold Voltage, 1.02nF Input Capacitance, and 2.5W Max Power Dissipation. Operates from -55°C to 150°C with 5ns Fall Time and 10ns Turn-On Delay. Packaged in a surface-mount SOIC (SOP-8) case, this silicon metal-oxide semiconductor FET is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF8714GPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.02nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 8.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 10ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF8714GPBF Datasheet
Download the complete datasheet for International Rectifier IRF8714GPBF to view detailed technical specifications.
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