International Rectifier
IRF8714PBF
Power Field-Effect Transistor, 14A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8
PackageSOIC
MountingSurface Mount
Power2.5W
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Technical Specifications
International Rectifier IRF8714PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 8.7MR |
| Dual Supply Voltage | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 1.02nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Power Dissipation | 2.5W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 10ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF8714PBF Datasheet
Download the complete datasheet for International Rectifier IRF8714PBF to view detailed technical specifications.
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