N-channel MOSFET, surface mount, SOIC package. Features 30V drain-source breakdown voltage and 21A continuous drain current. Offers low 5.1mΩ drain-source resistance at a nominal 1.8V gate-source voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Includes fast switching characteristics with turn-on delay of 13ns and fall time of 8ns. RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
Quick Jump:
Technical Specifications
International Rectifier IRF8734PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
21A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
5.1mR
Drain to Source Voltage (Vdss)
30V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
3.175nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
1
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
3.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
15ns
Turn-On Delay Time
13ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF8734PBF Datasheet
Download the complete datasheet for International Rectifier IRF8734PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.