IRF8915PBF

N-CH MOSFET 20V 8.9A 27mR SOIC Surface Mount

N-channel MOSFET transistor featuring a 20V drain-to-source breakdown voltage and 8.9A continuous drain current. Surface mountable in an 8-pin SOIC package, this component offers a low 27mΩ drain-to-source resistance. Key switching characteristics include a 6ns turn-on delay and 3.6ns fall time, with input capacitance at 540pF. Operating across a temperature range of -55°C to 150°C, it has a maximum power dissipation of 2W and is RoHS compliant.

PackageSOIC

Current Rating8.9A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

International Rectifier IRF8915PBF technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	8.9A
Current Rating	8.9A
Drain to Source Breakdown Voltage	20V
Drain to Source Resistance	27mR
Fall Time	3.6ns
Gate to Source Voltage (Vgs)	20V
Height	1.5mm
Input Capacitance	540pF
Lead Free	Lead Free
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2W
Mount	Surface Mount
Package Quantity	95
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	2W
Radiation Hardening	No
RoHS Compliant	Yes
Series	HEXFET® Series
Turn-Off Delay Time	7.1ns
Turn-On Delay Time	6ns
DC Rated Voltage	20V
Width	4mm