N-channel MOSFET transistor featuring a 20V drain-to-source breakdown voltage and 8.9A continuous drain current. Surface mountable in an 8-pin SOIC package, this component offers a low 27mΩ drain-to-source resistance. Key switching characteristics include a 6ns turn-on delay and 3.6ns fall time, with input capacitance at 540pF. Operating across a temperature range of -55°C to 150°C, it has a maximum power dissipation of 2W and is RoHS compliant.
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International Rectifier IRF8915PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.9A |
| Current Rating | 8.9A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 27mR |
| Fall Time | 3.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 540pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 7.1ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | 20V |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF8915PBF to view detailed technical specifications.
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