International Rectifier
IRF9130
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
PackageTO-204AA
MountingThrough Hole
Power75W
Quick Jump:
Technical Specifications
International Rectifier IRF9130 technical specifications.
General
| Package/Case | TO-204AA |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | -100V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRF9130 Datasheet
Download the complete datasheet for International Rectifier IRF9130 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
