Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
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International Rectifier IRF9240 technical specifications.
| Package/Case | TO-204AA |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | -200V |
| Dual Supply Voltage | -200V |
| Lead Pitch | 11mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Termination | Through Hole |
| Weight | 0.01kg |
| RoHS | Not CompliantNo |
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