Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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International Rectifier IRF9520 technical specifications.
| Continuous Drain Current (ID) | 6A |
| Current Rating | -6.8A |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.76mm |
| Input Capacitance | 390pF |
| Lead Free | Contains Lead |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| RoHS Compliant | No |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.6ns |
| DC Rated Voltage | -100V |
| Width | 4.7mm |
| RoHS | Not Compliant |
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