P-channel power MOSFET with 100V drain-source breakdown voltage and 6.8A continuous drain current. Features 0.48 ohm maximum drain-source on-resistance and 48W maximum power dissipation. Operates from -55°C to 175°C, with a 20V gate-source voltage rating. Packaged in a TO-220AB through-hole mount with lead-free construction.
PackageTO-220AB
Current Rating-6.8A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF9520NPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
6.8A
Current Rating
-6.8A
Drain to Source Breakdown Voltage
-100V
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
480mR
Dual Supply Voltage
-100V
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
350pF
Lead Free
Lead Free
Lead Pitch
2.54mm
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
48W
Mount
Through Hole
Nominal Vgs
-4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
28ns
Turn-On Delay Time
14ns
DC Rated Voltage
-100V
Width
4.69mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF9520NPBF Datasheet
Download the complete datasheet for International Rectifier IRF9520NPBF to view detailed technical specifications.
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