Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
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International Rectifier IRF9530 technical specifications.
| Continuous Drain Current (ID) | 12A |
| Current Rating | -12A |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Packaging | Bulk |
| Power Dissipation | 88W |
| RoHS Compliant | No |
| DC Rated Voltage | -100V |
| RoHS | Not Compliant |
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