P-channel power MOSFET featuring 100V drain-source voltage and 14A continuous drain current. This silicon, metal-oxide semiconductor FET offers a maximum on-resistance of 200mΩ and a gate-source voltage rating of ±20V. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 79W. The component includes lead-free and RoHS compliant construction.
PackageTO-220AB
Current Rating-14A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF9530NPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
14A
Current Rating
-14A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
200mR
Dual Supply Voltage
-100V
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
760pF
Lead Free
Lead Free
Lead Pitch
2.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
79W
Mount
Through Hole
Nominal Vgs
-4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
45ns
Turn-On Delay Time
15ns
DC Rated Voltage
-100V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF9530NPBF Datasheet
Download the complete datasheet for International Rectifier IRF9530NPBF to view detailed technical specifications.
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