P-channel power MOSFET featuring 100V drain-source voltage and 14A continuous drain current. This silicon, metal-oxide semiconductor FET offers a maximum on-resistance of 200mΩ and a gate-source voltage rating of ±20V. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 79W. The component includes lead-free and RoHS compliant construction.
PackageTO-220AB
Current Rating-14A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF9530NPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 14A |
| Current Rating | -14A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 200mR |
| Dual Supply Voltage | -100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 760pF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF9530NPBF Datasheet
Download the complete datasheet for International Rectifier IRF9530NPBF to view detailed technical specifications.
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