Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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International Rectifier IRF9540N technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 23A |
| Current Rating | -23A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 117mR |
| Fall Time | 51ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | -100V |
| RoHS | Not CompliantNo |
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