P-channel power MOSFET featuring 100V drain-source voltage and 23A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 117mΩ drain-source on-resistance and 140W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is RoHS compliant. Key electrical characteristics include a 20V gate-to-source voltage and 1.3nF input capacitance.
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International Rectifier IRF9540NPBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 23A |
| Current Rating | -23A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 117mR |
| Dual Supply Voltage | -100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 8.77mm |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 51ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | -100V |
| RoHS | Compliant |
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