P-channel power MOSFET featuring 100V drain-source voltage and 23A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 117mΩ drain-source on-resistance and 140W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is RoHS compliant. Key electrical characteristics include a 20V gate-to-source voltage and 1.3nF input capacitance.
PackageTO-220AB
Current Rating-23A
MountingThrough Hole
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Technical Specifications
International Rectifier IRF9540NPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
23A
Current Rating
-23A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
117mR
Dual Supply Voltage
-100V
Gate to Source Voltage (Vgs)
20V
Height
8.77mm
Input Capacitance
1.3nF
Lead Free
Lead Free
Lead Pitch
2.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
140W
Mount
Through Hole
Nominal Vgs
-4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
51ns
Turn-On Delay Time
15ns
DC Rated Voltage
-100V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF9540NPBF Datasheet
Download the complete datasheet for International Rectifier IRF9540NPBF to view detailed technical specifications.
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