IRF9540NSTRLPBF

P-channel power MOSFET for surface mount applications, featuring a 100V drain-source voltage and 23A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.117 ohms at a nominal gate-source voltage of 4V, with a maximum power dissipation of 110W. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching speeds with a 13ns turn-on delay and 40ns turn-off delay. Packaged in a D2PAK-3 (TO-263AB) with lead-free termination, this RoHS compliant component is designed for efficient power management.