P-channel power MOSFET for surface mount applications, featuring a 100V drain-source voltage and 23A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.117 ohms at a nominal gate-source voltage of 4V, with a maximum power dissipation of 110W. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching speeds with a 13ns turn-on delay and 40ns turn-off delay. Packaged in a D2PAK-3 (TO-263AB) with lead-free termination, this RoHS compliant component is designed for efficient power management.
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International Rectifier IRF9540NSTRLPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Voltage (Vdss) | 100V |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.45nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 13ns |
| Width | 9.65mm |
| RoHS | Compliant |
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