IRF9540NSTRR

Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

PackageTO-263-3

MountingSurface Mount

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International Rectifier IRF9540NSTRR technical specifications.

Package/Case

TO-263-3

Continuous Drain Current (ID)

23A

Drain to Source Voltage (Vdss)

100V

Input Capacitance

1.3nF

Max Power Dissipation

3.8W

Mount

Surface Mount

Package Quantity

800

Packaging

Tape and Reel

Rds On Max

117mR

RoHS Compliant

Series

HEXFET®

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.