Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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International Rectifier IRF9630 technical specifications.
| Continuous Drain Current (ID) | 6.5A |
| Current Rating | -6.5A |
| Drain to Source Voltage (Vdss) | 200V |
| Lead Free | Contains Lead |
| RoHS Compliant | No |
| Voltage | 200V |
| DC Rated Voltage | -200V |
| RoHS | Not Compliant |
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