P-channel MOSFET, 200V drain-source voltage, -11A continuous drain current, and 0.5 ohm on-resistance. This silicon metal-oxide semiconductor field-effect transistor features a 3W power dissipation and is RoHS compliant and lead-free. Designed for power applications, it is housed in a TO-263AB package.
International Rectifier IRF9640STRLPBF technical specifications.
| Continuous Drain Current (ID) | -11A |
| Drain to Source Voltage (Vdss) | -200V |
| Lead Free | Lead Free |
| Power Dissipation | 3W |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
