P-channel power MOSFET featuring a -55V drain-source breakdown voltage and a continuous drain current of -19A. This silicon, metal-oxide semiconductor FET offers a low 0.1 ohm drain-source resistance and a maximum power dissipation of 68W. Designed for through-hole mounting in a TO-262 package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 41ns fall time, 30ns turn-off delay, and 13ns turn-on delay.
PackageTO-262
Current Rating-19A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
International Rectifier IRF9Z34NLPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | -19A |
| Current Rating | -19A |
| Drain to Source Breakdown Voltage | -55V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 41ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 620pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Through Hole |
| Nominal Vgs | -4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 68W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | -55V |
| Width | 0.19inch |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF9Z34NLPBF Datasheet
Download the complete datasheet for International Rectifier IRF9Z34NLPBF to view detailed technical specifications.
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