P-channel power MOSFET featuring a -55V drain-source breakdown voltage and a continuous drain current of -19A. This silicon, metal-oxide semiconductor FET offers a low 0.1 ohm drain-source resistance and a maximum power dissipation of 68W. Designed for through-hole mounting in a TO-262 package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 41ns fall time, 30ns turn-off delay, and 13ns turn-on delay.
PackageTO-262
Current Rating-19A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
International Rectifier IRF9Z34NLPBF technical specifications.
General
Package/Case
TO-262
Continuous Drain Current (ID)
-19A
Current Rating
-19A
Drain to Source Breakdown Voltage
-55V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
55V
Fall Time
41ns
Gate to Source Voltage (Vgs)
20V
Height
9.65mm
Input Capacitance
620pF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Through Hole
Nominal Vgs
-4V
Package Quantity
50
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
68W
Radiation Hardening
No
Rds On Max
100mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
30ns
Turn-On Delay Time
13ns
DC Rated Voltage
-55V
Width
0.19inch
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF9Z34NLPBF Datasheet
Download the complete datasheet for International Rectifier IRF9Z34NLPBF to view detailed technical specifications.
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