P-channel power MOSFET featuring a -55V drain-source voltage and a continuous drain current of -19A. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 100mΩ at a nominal gate-source voltage of -4V. Designed for high-power applications, it boasts a maximum power dissipation of 68W and operates across a wide temperature range from -55°C to 175°C. The component is housed in a TO-263 package, is RoHS compliant, and LEAD FREE.
PackageTO-263
Current Rating-19A
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Technical Specifications
International Rectifier IRF9Z34NSTRLPBF technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
-19A
Current Rating
-19A
Drain to Source Voltage (Vdss)
-55V
Drain-source On Resistance-Max
100mR
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
68W
Nominal Vgs
-4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
-55V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF9Z34NSTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF9Z34NSTRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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