P-channel power MOSFET featuring a -55V drain-source voltage and a continuous drain current of -19A. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 100mΩ at a nominal gate-source voltage of -4V. Designed for high-power applications, it boasts a maximum power dissipation of 68W and operates across a wide temperature range from -55°C to 175°C. The component is housed in a TO-263 package, is RoHS compliant, and LEAD FREE.
PackageTO-263
Current Rating-19A
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Technical Specifications
International Rectifier IRF9Z34NSTRLPBF technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | -19A |
| Current Rating | -19A |
| Drain to Source Voltage (Vdss) | -55V |
| Drain-source On Resistance-Max | 100mR |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Nominal Vgs | -4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -55V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF9Z34NSTRLPBF Datasheet
Download the complete datasheet for International Rectifier IRF9Z34NSTRLPBF to view detailed technical specifications.
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