P-channel power MOSFET featuring a -55V drain-source voltage and a continuous drain current of -19A. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 100mΩ at a nominal gate-source voltage of -4V. Designed for high-power applications, it boasts a maximum power dissipation of 68W and operates across a wide temperature range from -55°C to 175°C. The component is housed in a TO-263 package, is RoHS compliant, and LEAD FREE.
International Rectifier IRF9Z34NSTRLPBF technical specifications.
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