N-Channel Power MOSFET featuring 60V drain-source voltage and 210A continuous drain current. Offers low 3mΩ drain-source on-resistance and 300W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C and is RoHS compliant. Key electrical characteristics include 6.54nF input capacitance and 4V threshold voltage.
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International Rectifier IRFB3206PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 210A |
| Current Rating | 210A |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 3MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 6.54nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 19ns |
| DC Rated Voltage | 60V |
| Width | 4.83mm |
| RoHS | Compliant |
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