Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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International Rectifier IRFB3207ZGPBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 170A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 4.1MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 6.92nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 20ns |
| Width | 4.83mm |
| RoHS | Compliant |
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