N-Channel Power MOSFET, 75V Drain-Source Voltage, 170A Continuous Drain Current, and 4.1mΩ Max Drain-Source On-Resistance. This silicon Metal-Oxide-Semiconductor FET features a TO-220AB package for through-hole mounting, a maximum power dissipation of 300W, and operates within a temperature range of -55°C to 175°C. It includes a nominal gate-source voltage of 4V and a gate-source voltage limit of 20V, with turn-on and turn-off delay times of 20ns and 55ns respectively. This RoHS compliant component is lead-free.
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International Rectifier IRFB3207ZPBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 170A |
| Current Rating | 170A |
| Drain to Source Voltage (Vdss) | 75V |
| Drain-source On Resistance-Max | 4.1MR |
| Dual Supply Voltage | 75V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 6.92nF |
| Lead Free | Lead Free |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 75V |
| Width | 4.82mm |
| RoHS | Compliant |
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