IRFB4110PBF

N-Channel MOSFET, 100V, 180A, 4.5mΩ, TO-220AB

N-Channel Power MOSFET, 100V drain-source voltage, 180A continuous drain current, and 4.5mΩ maximum drain-source on-resistance. This silicon, metal-oxide semiconductor FET features a TO-220AB package with through-hole mounting and a maximum power dissipation of 370W. Operating temperature range is -55°C to 175°C, with a gate-source voltage of 20V. RoHS compliant and lead-free.

PackageTO-220AB

Current Rating180A

MountingThrough Hole

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Technical Specifications

International Rectifier IRFB4110PBF technical specifications.

General

Package/Case	TO-220AB
Continuous Drain Current (ID)	180A
Current Rating	180A
Drain to Source Voltage (Vdss)	100V
Drain-source On Resistance-Max	4.5MR
Dual Supply Voltage	100V
Gate to Source Voltage (Vgs)	20V
Height	9.02mm
Input Capacitance	9.62nF
Lead Free	Lead Free
Length	10.66mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	370W
Mount	Through Hole
Nominal Vgs	4V
Reach SVHC Compliant	No
RoHS Compliant	Yes
Termination	Through Hole
Turn-Off Delay Time	78ns
Turn-On Delay Time	25ns
DC Rated Voltage	100V
Width	4.82mm