N-Channel Power MOSFET, 100V drain-source voltage, 180A continuous drain current, and 4.5mΩ maximum drain-source on-resistance. This silicon, metal-oxide semiconductor FET features a TO-220AB package with through-hole mounting and a maximum power dissipation of 370W. Operating temperature range is -55°C to 175°C, with a gate-source voltage of 20V. RoHS compliant and lead-free.
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International Rectifier IRFB4110PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 180A |
| Current Rating | 180A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 4.5MR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 9.62nF |
| Lead Free | Lead Free |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 370W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 78ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | 100V |
| Width | 4.82mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFB4110PBF to view detailed technical specifications.
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