N-Channel Power MOSFET, TO-220AB package, featuring 100V drain-source breakdown voltage and 7mΩ Rds On. Delivers 130A continuous drain current with a maximum power dissipation of 300W. Operates across a wide temperature range from -55°C to 175°C. Designed for through-hole mounting with fast switching characteristics, including a 26ns turn-on delay and 78ns fall time.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
International Rectifier IRFB4310GPBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
130A
Drain to Source Breakdown Voltage
100V
Drain to Source Voltage (Vdss)
100V
Fall Time
78ns
Gate to Source Voltage (Vgs)
20V
Height
16.51mm
Input Capacitance
7.67nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Nominal Vgs
4V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
7mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
68ns
Turn-On Delay Time
26ns
Width
4.83mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFB4310GPBF Datasheet
Download the complete datasheet for International Rectifier IRFB4310GPBF to view detailed technical specifications.
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