N-Channel Power MOSFET, TO-220AB package, featuring 100V drain-source breakdown voltage and 7mΩ Rds On. Delivers 130A continuous drain current with a maximum power dissipation of 300W. Operates across a wide temperature range from -55°C to 175°C. Designed for through-hole mounting with fast switching characteristics, including a 26ns turn-on delay and 78ns fall time.
International Rectifier IRFB4310GPBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 130A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 78ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 16.51mm |
| Input Capacitance | 7.67nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 26ns |
| Width | 4.83mm |
| RoHS | Compliant |
No datasheet is available for this part.
