International Rectifier
IRFB4310ZPBF
Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
PackageTO-220AB
MountingThrough Hole
Quick Jump:
Technical Specifications
International Rectifier IRFB4310ZPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 127A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 6MR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 6.86nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 20ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFB4310ZPBF Datasheet
Download the complete datasheet for International Rectifier IRFB4310ZPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
