International Rectifier
IRFB4321GPBF
Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
International Rectifier IRFB4321GPBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 83A |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 4.46nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Rds On Max | 15mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFB4321GPBF Datasheet
Download the complete datasheet for International Rectifier IRFB4321GPBF to view detailed technical specifications.
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