N-Channel Power MOSFET featuring 100V drain-source voltage and 88A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 10mΩ on-state resistance and 200W power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is lead-free and RoHS compliant. Key switching parameters include a 24ns turn-on delay and 50ns fall time.
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International Rectifier IRFB4410PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 88A |
| Current Rating | 96A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 10MR |
| Dual Supply Voltage | 100V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 5.15nF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| On-State Resistance | 10mR |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 38ns |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 24ns |
| DC Rated Voltage | 100V |
| Width | 4.82mm |
| RoHS | Compliant |
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