IRFB4410ZPBF

N-Channel MOSFET | 100V | 97A | 0.009ohm | TO-220AB

N-Channel Power MOSFET featuring 100V drain-source voltage and 97A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.009 ohm drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C with a maximum power dissipation of 230W. Key electrical characteristics include 4.82nF input capacitance and fast switching times with 16ns turn-on and 43ns turn-off delay.

PackageTO-220AB

MountingThrough Hole

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Technical Specifications

International Rectifier IRFB4410ZPBF technical specifications.

General

Package/Case	TO-220AB
Continuous Drain Current (ID)	97A
Drain to Source Voltage (Vdss)	100V
Drain-source On Resistance-Max	9MR
Dual Supply Voltage	100V
Gate to Source Voltage (Vgs)	20V
Height	9.02mm
Input Capacitance	4.82nF
Lead Free	Lead Free
Length	10.66mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	230W
Mount	Through Hole
Nominal Vgs	4V
Reach SVHC Compliant	No
RoHS Compliant	Yes
Termination	Through Hole
Turn-Off Delay Time	43ns
Turn-On Delay Time	16ns
Width	4.82mm