N-Channel Power MOSFET featuring 100V drain-source voltage and 97A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.009 ohm drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C with a maximum power dissipation of 230W. Key electrical characteristics include 4.82nF input capacitance and fast switching times with 16ns turn-on and 43ns turn-off delay.
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International Rectifier IRFB4410ZPBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 97A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 9MR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 4.82nF |
| Lead Free | Lead Free |
| Length | 10.66mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 230W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 16ns |
| Width | 4.82mm |
| RoHS | Compliant |
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