Power Field-Effect Transistor, 62A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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International Rectifier IRFB4510PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 62A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 3.18nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Power Dissipation | 140W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 13ns |
| Width | 4.83mm |
| RoHS | Compliant |
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