N-Channel Power MOSFET with 200V drain-source voltage and 25A continuous drain current. Features low 72.5mΩ maximum drain-source on-resistance and 144W power dissipation. Operates with a nominal gate-source voltage of 3V and a maximum gate-source voltage of 20V. Packaged in a TO-220AB through-hole plastic package, this silicon metal-oxide semiconductor FET offers a maximum operating temperature of 175°C.
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International Rectifier IRFB4620PBF technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 72.5MR |
| Dual Supply Voltage | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 1.71nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 144W |
| Mount | Through Hole |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 144W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Termination | Through Hole |
| Turn-Off Delay Time | 25.4ns |
| Turn-On Delay Time | 13.4ns |
| Width | 4.83mm |
| RoHS | Compliant |
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