International Rectifier
IRFB5620PBF
Power Field-Effect Transistor, 25A I(D), 200V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
International Rectifier IRFB5620PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 72.5MR |
| Dual Supply Voltage | 200V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 1.71nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 14W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 17.1ns |
| Turn-On Delay Time | 8.6ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFB5620PBF Datasheet
Download the complete datasheet for International Rectifier IRFB5620PBF to view detailed technical specifications.
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