Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-263, 3 PIN
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International Rectifier IRFBE30LPBF technical specifications.
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 4.1A |
| Current Rating | 4.1A |
| Drain to Source Voltage (Vdss) | 800V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| RoHS Compliant | Yes |
| DC Rated Voltage | 800V |
| RoHS | Compliant |
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