IRFBE30LPBF

Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-263, 3 PIN

PackageTO-262

Current Rating4.1A

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International Rectifier IRFBE30LPBF technical specifications.

Package/Case

TO-262

Continuous Drain Current (ID)

4.1A

Current Rating

4.1A

Drain to Source Voltage (Vdss)

800V

Lead Free

Packaging

Bulk

RoHS Compliant

Yes

DC Rated Voltage

800V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.