International Rectifier
IRFBG30
Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Current Rating3.1A
Power125W
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Technical Specifications
International Rectifier IRFBG30 technical specifications.
General
| Continuous Drain Current (ID) | 3.1A |
| Current Rating | 3.1A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 5R |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Power Dissipation | 125W |
| RoHS Compliant | No |
| DC Rated Voltage | 1kV |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFBG30 Datasheet
Download the complete datasheet for International Rectifier IRFBG30 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.