Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Sign in to ask questions about the International Rectifier IRFBG30 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRFBG30 technical specifications.
| Continuous Drain Current (ID) | 3.1A |
| Current Rating | 3.1A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 5R |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Power Dissipation | 125W |
| RoHS Compliant | No |
| DC Rated Voltage | 1kV |
| RoHS | Not Compliant |
Download the complete datasheet for International Rectifier IRFBG30 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
