Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
International Rectifier IRFBG30-005 technical specifications.
| RoHS Compliant | No |
| RoHS | Not Compliant |
No datasheet is available for this part.
