Power Field-Effect Transistor, 5.5A I(D), 200V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
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| Package/Case | TO-39 |
| Continuous Drain Current (ID) | 5.5A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 400mR |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Packaging | Bulk |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| RoHS | Not CompliantNo |
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