N-Channel Power MOSFET, 40V Drain-Source Voltage, 28A Continuous Drain Current, and 2.6mΩ Drain-Source Resistance. This silicon, metal-oxide semiconductor FET features a 1-element configuration and a QFN-8 package, measuring 6mm x 5mm with a height of 0.81mm. It operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 3.6W. The component offers a nominal gate-source voltage of 4V and includes fast switching characteristics with a turn-on delay of 13ns and fall time of 28ns. This surface-mount device is halogen-free and RoHS compliant.
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5004TR2PBF technical specifications.
General
| Package/Case | QFN |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 2.6mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.81mm |
| Input Capacitance | 4.29nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 5.9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 13ns |
| Width | 6mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH5004TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5004TR2PBF to view detailed technical specifications.
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