N-Channel Power MOSFET, 40V Drain-Source Voltage, 28A Continuous Drain Current, and 2.6mΩ Drain-Source Resistance. This silicon, metal-oxide semiconductor FET features a 1-element configuration and a QFN-8 package, measuring 6mm x 5mm with a height of 0.81mm. It operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 3.6W. The component offers a nominal gate-source voltage of 4V and includes fast switching characteristics with a turn-on delay of 13ns and fall time of 28ns. This surface-mount device is halogen-free and RoHS compliant.
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRFH5004TR2PBF technical specifications.
General
Package/Case
QFN
Continuous Drain Current (ID)
28A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
2.6mR
Drain to Source Voltage (Vdss)
40V
Fall Time
28ns
Gate to Source Voltage (Vgs)
20V
Height
0.81mm
Input Capacitance
4.29nF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.6W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.6W
Radiation Hardening
No
Rds On Max
5.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
4V
Turn-Off Delay Time
28ns
Turn-On Delay Time
13ns
Width
6mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH5004TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH5004TR2PBF to view detailed technical specifications.
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