Dual N-Channel MOSFET, 30V Drain to Source Breakdown Voltage, 28A Continuous Drain Current, and 3mΩ Drain to Source Resistance. Features a 2.35V nominal Gate to Source Voltage, 1.06nF input capacitance, and 14ns fall time. This surface mount component operates from -55°C to 150°C with a maximum power dissipation of 3.4W. Packaged in tape and reel, it is RoHS compliant.
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International Rectifier IRFH7911TR2PBF technical specifications.
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 14ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 1.06nF |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.4W |
| Mount | Surface Mount |
| Nominal Vgs | 2.35V |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.4W |
| Radiation Hardening | No |
| Rds On Max | 8.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 2.35V |
| Turn-Off Delay Time | 28ns |
| Width | 5mm |
| RoHS | Compliant |
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