Dual N-Channel MOSFET, 30V Drain to Source Breakdown Voltage, 28A Continuous Drain Current, and 3mΩ Drain to Source Resistance. Features a 2.35V nominal Gate to Source Voltage, 1.06nF input capacitance, and 14ns fall time. This surface mount component operates from -55°C to 150°C with a maximum power dissipation of 3.4W. Packaged in tape and reel, it is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power3.4W
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Technical Specifications
International Rectifier IRFH7911TR2PBF technical specifications.
General
Continuous Drain Current (ID)
28A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3mR
Drain to Source Voltage (Vdss)
30V
Fall Time
14ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
1.06nF
Length
6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.4W
Mount
Surface Mount
Nominal Vgs
2.35V
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.4W
Radiation Hardening
No
Rds On Max
8.6mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
2.35V
Turn-Off Delay Time
28ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH7911TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH7911TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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