N-channel MOSFET with 30V drain-source breakdown voltage and 24A continuous drain current. Features low 3.3mΩ drain-source on-resistance at a nominal gate-source voltage of 1.8V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 3.1W. Surface mountable in a PQFN56 package, this component offers fast switching with turn-on and fall times of 20ns, and a turn-off delay of 23ns. RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
International Rectifier IRFH7932TR2PBF technical specifications.
General
Continuous Drain Current (ID)
24A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3.3mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
3.3MR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
4.27nF
Length
6.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.1W
Radiation Hardening
No
Rds On Max
3.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
1.8V
Turn-Off Delay Time
23ns
Turn-On Delay Time
20ns
Width
5.1mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH7932TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH7932TR2PBF to view detailed technical specifications.
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