N-channel MOSFET with 30V drain-source breakdown voltage and 24A continuous drain current. Features low 3.3mΩ drain-source on-resistance at a nominal gate-source voltage of 1.8V. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 3.1W. Surface mountable in a PQFN56 package, this component offers fast switching with turn-on and fall times of 20ns, and a turn-off delay of 23ns. RoHS compliant.
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International Rectifier IRFH7932TR2PBF technical specifications.
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.3MR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 4.27nF |
| Length | 6.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 3.3mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 20ns |
| Width | 5.1mm |
| RoHS | Compliant |
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