N-channel MOSFET featuring 30V drain-source breakdown voltage and 20A continuous drain current. Offers a low 4.8mΩ maximum drain-source on-resistance at a nominal 1.8V gate-source voltage. This surface mount component boasts fast switching speeds with a 17ns turn-on delay and 7ns fall time, supported by 2.36nF input capacitance. Operating across a wide temperature range of -55°C to 150°C, it has a maximum power dissipation of 3.1W and is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
International Rectifier IRFH7936TR2PBF technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4.8MR |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 2.36nF |
| Lead Free | Lead Free |
| Length | 6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 4.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 17ns |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFH7936TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH7936TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.