N-channel MOSFET featuring 30V drain-source breakdown voltage and 20A continuous drain current. Offers a low 4.8mΩ maximum drain-source on-resistance at a nominal 1.8V gate-source voltage. This surface mount component boasts fast switching speeds with a 17ns turn-on delay and 7ns fall time, supported by 2.36nF input capacitance. Operating across a wide temperature range of -55°C to 150°C, it has a maximum power dissipation of 3.1W and is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
International Rectifier IRFH7936TR2PBF technical specifications.
General
Continuous Drain Current (ID)
20A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
4.8mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
4.8MR
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
2.36nF
Lead Free
Lead Free
Length
6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.1W
Radiation Hardening
No
Rds On Max
4.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
19ns
Turn-On Delay Time
17ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH7936TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH7936TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.