N-Channel Power MOSFET, 30V Vds, 23A Continuous Drain Current (ID), and 4.1mΩ Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a 1.17mm height, 5.85mm length, and 5mm width in a QFN package for surface mounting. With a maximum power dissipation of 54W and operating temperatures from -55°C to 150°C, it offers fast switching with turn-on delay of 13ns and fall time of 8.5ns. This component is RoHS compliant and HALOGEN FREE.
Sign in to ask questions about the International Rectifier IRFH8324TR2PBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRFH8324TR2PBF technical specifications.
| Package/Case | QFN |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.1mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 3.1MR |
| Fall Time | 8.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.17mm |
| Input Capacitance | 2.38nF |
| Lead Free | Lead Free |
| Length | 5.85mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 54W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 400 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 13ns |
| Width | 5mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFH8324TR2PBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
