IRFH8324TR2PBF

N-Channel MOSFET, 30V, 23A, 4.1mR, QFN, Surface Mount

N-Channel Power MOSFET, 30V Vds, 23A Continuous Drain Current (ID), and 4.1mΩ Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a 1.17mm height, 5.85mm length, and 5mm width in a QFN package for surface mounting. With a maximum power dissipation of 54W and operating temperatures from -55°C to 150°C, it offers fast switching with turn-on delay of 13ns and fall time of 8.5ns. This component is RoHS compliant and HALOGEN FREE.

PackageQFN

MountingSurface Mount

PolarityN-CHANNEL

Power3.6W

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Technical Specifications

International Rectifier IRFH8324TR2PBF technical specifications.

General

Package/Case	QFN
Continuous Drain Current (ID)	23A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	4.1mR
Drain to Source Voltage (Vdss)	30V
Drain-source On Resistance-Max	3.1MR
Fall Time	8.5ns
Gate to Source Voltage (Vgs)	20V
Height	1.17mm
Input Capacitance	2.38nF
Lead Free	Lead Free
Length	5.85mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	54W
Mount	Surface Mount
Nominal Vgs	1.8V
Number of Elements	1
Package Quantity	400
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	3.6W
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Turn-Off Delay Time	14ns
Turn-On Delay Time	13ns
Width	5mm