N-Channel Power MOSFET, 30V Vds, 17A continuous drain current, and 6.6mΩ Rds(on). This silicon, metal-oxide semiconductor FET features a 1.45nF input capacitance and 5.7ns fall time. Designed for surface mounting in an 8-pin QFN package (6x5mm, 1.17mm height), it operates from -55°C to 150°C with a 3.3W power dissipation. It is halogen-free and RoHS compliant.
PackageQFN
MountingSurface Mount
PolarityN-CHANNEL
Power3.3W
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Technical Specifications
International Rectifier IRFH8330TR2PBF technical specifications.
General
Package/Case
QFN
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
6.6mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
6.6MR
Fall Time
5.7ns
Gate to Source Voltage (Vgs)
20V
Height
1.17mm
Input Capacitance
1.45nF
Lead Free
Lead Free
Length
5.85mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.3W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.3W
Radiation Hardening
No
Rds On Max
6.6mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
10ns
Turn-On Delay Time
9.2ns
Width
5mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFH8330TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFH8330TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.