N-Channel Power MOSFET, 30V Vds, 17A continuous drain current, and 6.6mΩ Rds(on). This silicon, metal-oxide semiconductor FET features a 1.45nF input capacitance and 5.7ns fall time. Designed for surface mounting in an 8-pin QFN package (6x5mm, 1.17mm height), it operates from -55°C to 150°C with a 3.3W power dissipation. It is halogen-free and RoHS compliant.
International Rectifier IRFH8330TR2PBF technical specifications.
| Package/Case | QFN |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6.6MR |
| Fall Time | 5.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.17mm |
| Input Capacitance | 1.45nF |
| Lead Free | Lead Free |
| Length | 5.85mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.3W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.3W |
| Radiation Hardening | No |
| Rds On Max | 6.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 9.2ns |
| Width | 5mm |
| RoHS | Compliant |
No datasheet is available for this part.
