Power Field-Effect Transistor, 17A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
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International Rectifier IRFH8330TRPBF technical specifications.
| Package/Case | QFN |
| Continuous Drain Current (ID) | 56A |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 1.45nF |
| Max Power Dissipation | 3.3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Rds On Max | 6.6mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| RoHS | Compliant |
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