The IRFHM830TRPBF is a 30V HEXFET MOSFET with a continuous drain current of 21A and a drain-source on resistance of 6mΩ. It features a QFN package and is suitable for surface mount applications. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The IRFHM830TRPBF has a maximum power dissipation of 2.7W and a nominal gate-source voltage of 1.8V.
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International Rectifier IRFHM830TRPBF technical specifications.
| Package/Case | QFN |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6MR |
| Fall Time | 9.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 2.155nF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 12ns |
| Width | 3.3mm |
| RoHS | Compliant |
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