International Rectifier
IRFHM830TRPBF
Power Field-Effect Transistor, 21A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
PackageQFN
MountingSurface Mount
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Technical Specifications
International Rectifier IRFHM830TRPBF technical specifications.
General
Package/Case
QFN
Continuous Drain Current (ID)
21A
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
6MR
Fall Time
9.2ns
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
2.155nF
Lead Free
Lead Free
Length
3.3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.7W
Mount
Surface Mount
Nominal Vgs
1.8V
Packaging
Cut Tape
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Turn-Off Delay Time
13ns
Turn-On Delay Time
12ns
Width
3.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFHM830TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFHM830TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.