Power Field-Effect Transistor, 16A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
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International Rectifier IRFHM8330TRPBF technical specifications.
| Continuous Drain Current (ID) | 16A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.45nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 2.7W |
| Radiation Hardening | No |
| Rds On Max | 6.6mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 9.2ns |
| RoHS | Compliant |
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