P-channel MOSFET featuring 11A continuous drain current and 30V drain-to-source breakdown voltage. Offers a low 14.6mΩ drain-to-source resistance at a 10V gate-source voltage. This surface-mount device operates within a -55°C to 150°C temperature range and boasts a maximum power dissipation of 68W. Designed with a 3x3mm QFN-8 package, it is halogen-free and RoHS compliant.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
Power2.8W
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Technical Specifications
International Rectifier IRFHM9331TR2PBF technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
14.6mR
Drain to Source Voltage (Vdss)
60V
Fall Time
60ns
Gate to Source Voltage (Vgs)
25V
Height
0.95mm
Input Capacitance
1.725nF
Length
3mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
68W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.8W
Radiation Hardening
No
Rds On Max
26mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
72ns
Turn-On Delay Time
11ns
Width
3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFHM9331TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFHM9331TR2PBF to view detailed technical specifications.
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