P-channel MOSFET featuring 11A continuous drain current and 30V drain-to-source breakdown voltage. Offers a low 14.6mΩ drain-to-source resistance at a 10V gate-source voltage. This surface-mount device operates within a -55°C to 150°C temperature range and boasts a maximum power dissipation of 68W. Designed with a 3x3mm QFN-8 package, it is halogen-free and RoHS compliant.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
Power2.8W
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Technical Specifications
International Rectifier IRFHM9331TR2PBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 14.6mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 0.95mm |
| Input Capacitance | 1.725nF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 11ns |
| Width | 3mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFHM9331TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFHM9331TR2PBF to view detailed technical specifications.
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