N-CHANNEL MOSFET, 25V Vds, 9.9A continuous drain current, and 13mΩ Rds On at 1.8V Vgs. Features low input capacitance of 675pF and fast switching times with turn-on delay of 6.5ns and fall time of 5.3ns. Surface mount TO-252-3 package with 2.1W power dissipation, operating from -55°C to 150°C. RoHS compliant.
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International Rectifier IRFHS8242TR2PBF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 9.9A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 5.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 675pF |
| Length | 2.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 39mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 5.4ns |
| Turn-On Delay Time | 6.5ns |
| Width | 2.1mm |
| RoHS | Compliant |
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