N-CHANNEL MOSFET, 25V Vds, 9.9A continuous drain current, and 13mΩ Rds On at 1.8V Vgs. Features low input capacitance of 675pF and fast switching times with turn-on delay of 6.5ns and fall time of 5.3ns. Surface mount TO-252-3 package with 2.1W power dissipation, operating from -55°C to 150°C. RoHS compliant.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power2.1W
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Technical Specifications
International Rectifier IRFHS8242TR2PBF technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
9.9A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
13mR
Drain to Source Voltage (Vdss)
25V
Fall Time
5.3ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
675pF
Length
2.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.1W
Radiation Hardening
No
Rds On Max
39mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
5.4ns
Turn-On Delay Time
6.5ns
Width
2.1mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFHS8242TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFHS8242TR2PBF to view detailed technical specifications.
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