P-channel MOSFET with -30V drain-source breakdown voltage and 6A continuous drain current. Features a low 37mOhm drain-source resistance at a nominal Vgs of -1.8V, with a maximum Rds On of 8.5mOhm. Operates within a temperature range of -55°C to 150°C, offering a maximum power dissipation of 2.1W. This surface-mount SOIC package component has a turn-on delay of 12ns and a fall time of 25ns.
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International Rectifier IRFHS9301TR2PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 37mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.95mm |
| Input Capacitance | 1.04nF |
| Length | 2.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Nominal Vgs | -1.8V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Series | HEXFET® |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 12ns |
| Width | 2.1mm |
| RoHS | Not CompliantNo |
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