P-channel MOSFET with -30V drain-source breakdown voltage and 6A continuous drain current. Features a low 37mOhm drain-source resistance at a nominal Vgs of -1.8V, with a maximum Rds On of 8.5mOhm. Operates within a temperature range of -55°C to 150°C, offering a maximum power dissipation of 2.1W. This surface-mount SOIC package component has a turn-on delay of 12ns and a fall time of 25ns.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.1W
Quick Jump:
Technical Specifications
International Rectifier IRFHS9301TR2PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
6A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
37mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
0.95mm
Input Capacitance
1.04nF
Length
2.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Nominal Vgs
-1.8V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.1W
Radiation Hardening
No
Rds On Max
8.5mR
Reach SVHC Compliant
No
RoHS Compliant
No
Series
HEXFET®
Turn-Off Delay Time
13ns
Turn-On Delay Time
12ns
Width
2.1mm
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRFHS9301TR2PBF Datasheet
Download the complete datasheet for International Rectifier IRFHS9301TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
