N-Channel Power MOSFET featuring 100V drain-source voltage and 11A continuous drain current. Offers a low 72.5mΩ maximum drain-source on-resistance. Designed with a TO-220-5 package for through-hole mounting, this silicon metal-oxide semiconductor FET operates from -55°C to 150°C with a maximum power dissipation of 18W. Includes 490pF input capacitance and fast switching times with 4.7ns turn-on and 9.5ns turn-off delay.
PackageTO-220-5
MountingThrough Hole
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Technical Specifications
International Rectifier IRFI4212H-117P technical specifications.
General
| Package/Case | TO-220-5 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 72.5MR |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.02mm |
| Input Capacitance | 490pF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 18W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Rds On Max | 72.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 9.5ns |
| Turn-On Delay Time | 4.7ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFI4212H-117P Datasheet
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