Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, FULL PACK-3
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International Rectifier IRFI630GPBF technical specifications.
| Continuous Drain Current (ID) | 5.9A |
| Current Rating | 5.9A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Voltage (Vdss) | 200V |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 32W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
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