Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULLPAK-3
International Rectifier IRFIB41N15D technical specifications.
| Continuous Drain Current (ID) | 41A |
| Drain to Source Voltage (Vdss) | 150V |
| RoHS Compliant | No |
| RoHS | Not Compliant |
Download the complete datasheet for International Rectifier IRFIB41N15D to view detailed technical specifications.
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